Low-Frequency Noise Characterization of Germanium n-Channel FinFETs

This article presents an experimental, room temperature, low-frequency noise characterization of germanium n-channel fin-field-effect transistors (finFETs) integrated on silicon. After determining the dominant mechanism in the noise spectrum, the main parameters associated with the noise mechanism are extracted and evaluated as a function of fin width from a planar-like (100 nm) up to narrow fin (20 nm) for 1- $\mu \text{m}$ length devices. The main findings are that the 1/ ${f}$ noise plays an important role in the Ge n-finFETs, whereby the trap density profiles in the gate-stack are quite uniform and have a lower level than in n-/p-channel Ge planar MOSFETs. In addition, a generation-recombination (GR) component was found in 160-nm-length devices, which is caused by GR centers located in the depletion region.