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Effect of deposition temperature on polymorphous silicon thin films by PECVD: Role of hydrogen
- Source :
- Materials Science in Semiconductor Processing. 41:390-397
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- Pm-Si:H which has improved optical and transport properties as well as stability compared to hydrogenated amorphous silicon is studied. In order to understand the effect of the growth temperature on pm-Si:H films, hydrogen bonding and stability were analyzed in this work. Samples grown at different temperatures were compared and a change on the films morphology and structure was observed. HRTEM images evidence nanocrystals with approximate size of 9 nm. A growth surface reorganization was observed at an almost constant deposition rate. Increasing the deposition temperature leads to a more ordered, compact and smooth structure of the pm-Si:H films. Hydrogen interaction with the growing surface is related to the deposition temperature, changing the growth of the amorphous matrix due to hydrogen surface diffusion into lower energy and more stable positions. The total hydrogen in the film is reduced as temperature increases and hydrogen becomes more tightly bonded, which changes in a non monotonous way how the nanocrystals are incorporated and their environment. The optoelectronic properties of the films are directly related to the incorporation of hydrogen and whether it is weakly or tightly bonded. A diminution of the optical gap of the pm-Si:H films in the range from 1.71 to 1.65 eV was observed with the increase of the deposition temperature in the range from 175 to 275 °C.
- Subjects :
- 010302 applied physics
Amorphous silicon
Surface diffusion
Range (particle radiation)
Materials science
Hydrogen
Hydrogen bond
Mechanical Engineering
chemistry.chemical_element
Nanotechnology
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
chemistry.chemical_compound
Nanocrystal
chemistry
Chemical engineering
Mechanics of Materials
Plasma-enhanced chemical vapor deposition
0103 physical sciences
General Materials Science
0210 nano-technology
High-resolution transmission electron microscopy
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 41
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........ce923385ccc39df7609aec78dd8f3dc7