Characteristics of Silicon Films Deposited by Atmospheric-Pressure Plasma-Enhanced Chemical Transport

Authors :: Teruki Naito
Yoshinori Yokoyama
Toshihiro Itoh
Konno Nobuaki
Takashi Tokunaga
Source :: Electronics and Communications in Japan. 96:26-31
Publication Year :: 2013
Publisher :: Wiley, 2013.
Abstract: SUMMARY The characteristics of silicon films deposited at 700 Torr by plasma-enhanced chemical transport were investigated. The Si films were polycrystalline and the Hall mobility was 1.9 cm2/Vs. These results indicate that our Si films are comparable with polycrystalline Si deposited by conventional plasma-enhanced CVD. We fabricated a strain gauge sensor using our silicon film. The output voltage showed a good linearity to the pressure. © 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(8): 26–31, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/ecj.11467

Subjects :: Materials science
Atmospheric pressure
Silicon
Computer Networks and Communications
Applied Mathematics
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Atmospheric-pressure plasma
Electron
chemistry
Torr
Signal Processing
Crystallite
Electrical and Electronic Engineering
Strain gauge
Voltage

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