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Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer
- Source :
- Journal of Nanoscience and Nanotechnology. 18:7479-7483
- Publication Year :
- 2018
- Publisher :
- American Scientific Publishers, 2018.
- Subjects :
- Materials science
business.industry
Transistor
Biomedical Engineering
Bioengineering
Algan gan
02 engineering and technology
General Chemistry
Trapping
021001 nanoscience & nanotechnology
Condensed Matter Physics
Buffer (optical fiber)
law.invention
Stress (mechanics)
Fe doped
law
Optoelectronics
General Materials Science
0210 nano-technology
business
High electron
Subjects
Details
- ISSN :
- 15334880
- Volume :
- 18
- Database :
- OpenAIRE
- Journal :
- Journal of Nanoscience and Nanotechnology
- Accession number :
- edsair.doi...........ce59b79bbfee4181dce2b530ca365308