Device Challenges for Making a p-Side Down HVPE-Grown n-InGaN/p-GaN Single Heterostructure LED

In this paper, we demonstrate the electrical and optical properties of hydride vapor phase epitaxy (HVPE)-deposited single heterostructure (SH) n-InGaN/p-GaN LED structures. We also discuss the device challenges associated with fabrication, as well as potential solutions for these problems.