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Cosputtered Mn-doped Si thin films studied by x-ray spectroscopy
- Source :
- Journal of Applied Physics. 106:103517
- Publication Year :
- 2009
- Publisher :
- AIP Publishing, 2009.
-
Abstract
- Substitutionally doped Si1−xMnx thin films were fabricated by a magnetron cosputtering method at a low growth temperature. X-ray absorption fine structure (XAFS) and x-ray diffraction (XRD) techniques were used to investigate the structures of the Si1−xMnx thin films. The XRD results exhibit that no secondary phases such as metallic Mn or Mn–Si compound can be detected. The detailed analysis of the extended XAFS together with the x-ray absorption near-edge structure spectra at the Mn K-edge unambiguously reveals that the doped Mn atoms are incorporated into the Si matrix and substitute for the Si sites in the Si lattice. The results clearly indicate that the Mn occupations in silicon thin films are quite sensitive to the growth conditions and the postannealing treatment.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 106
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........ce4181ad6597df7e537fe5ae5be03e6e
- Full Text :
- https://doi.org/10.1063/1.3257235