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Cosputtered Mn-doped Si thin films studied by x-ray spectroscopy

Authors :
Shiqiang Wei
Qinghua Liu
Wensheng Yan
Jian Ye
Yong Jiang
Hiroyuki Oyanagi
Tao Yao
Zhiyun Pan
Zhihu Sun
Source :
Journal of Applied Physics. 106:103517
Publication Year :
2009
Publisher :
AIP Publishing, 2009.

Abstract

Substitutionally doped Si1−xMnx thin films were fabricated by a magnetron cosputtering method at a low growth temperature. X-ray absorption fine structure (XAFS) and x-ray diffraction (XRD) techniques were used to investigate the structures of the Si1−xMnx thin films. The XRD results exhibit that no secondary phases such as metallic Mn or Mn–Si compound can be detected. The detailed analysis of the extended XAFS together with the x-ray absorption near-edge structure spectra at the Mn K-edge unambiguously reveals that the doped Mn atoms are incorporated into the Si matrix and substitute for the Si sites in the Si lattice. The results clearly indicate that the Mn occupations in silicon thin films are quite sensitive to the growth conditions and the postannealing treatment.

Details

ISSN :
10897550 and 00218979
Volume :
106
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........ce4181ad6597df7e537fe5ae5be03e6e
Full Text :
https://doi.org/10.1063/1.3257235