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Statistical Evaluation of Electromigration Reliability at Chip Level

Authors :
Dileep N. Netrabile
Timothy D. Sullivan
Paul S. McLaughlin
Jeanne P. Bickford
Peter A. Habitz
Baozhen Li
Source :
IEEE Transactions on Device and Materials Reliability. 11:86-91
Publication Year :
2011
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2011.

Abstract

Chip level electromigration (EM) reliability is determined by: 1) the element level EM failure probability used for design guideline generation; and 2) the distribution of EM elements against design limits. Balancing these two factors is critical for a chip design to achieve the best performance while maintaining chip level EM reliability. This paper discusses the relationship between element level and chip level EM failure probability and provides examples of EM evaluation of chip designs.

Details

ISSN :
15582574 and 15304388
Volume :
11
Database :
OpenAIRE
Journal :
IEEE Transactions on Device and Materials Reliability
Accession number :
edsair.doi...........ce2fcecedb291a010a8c21fd53289351
Full Text :
https://doi.org/10.1109/tdmr.2010.2093526