Back to Search
Start Over
Statistical Evaluation of Electromigration Reliability at Chip Level
- Source :
- IEEE Transactions on Device and Materials Reliability. 11:86-91
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- Chip level electromigration (EM) reliability is determined by: 1) the element level EM failure probability used for design guideline generation; and 2) the distribution of EM elements against design limits. Balancing these two factors is critical for a chip design to achieve the best performance while maintaining chip level EM reliability. This paper discusses the relationship between element level and chip level EM failure probability and provides examples of EM evaluation of chip designs.
- Subjects :
- Engineering
business.industry
InformationSystems_INFORMATIONSYSTEMSAPPLICATIONS
Failure probability
ComputerApplications_COMPUTERSINOTHERSYSTEMS
Integrated circuit design
Chip
Electromigration
Electronic, Optical and Magnetic Materials
Reliability engineering
Reliability (semiconductor)
Chip-scale package
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
Subjects
Details
- ISSN :
- 15582574 and 15304388
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Device and Materials Reliability
- Accession number :
- edsair.doi...........ce2fcecedb291a010a8c21fd53289351
- Full Text :
- https://doi.org/10.1109/tdmr.2010.2093526