The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

Authors :: Isabel M.P.L.V.O. Ferreira
Rodrigo Martins
Maria Manuela Almeida Carvalho Vieira
Elvira Fortunato
Source :: MRS Proceedings. 358
Publication Year :: 1994
Publisher :: Springer Science and Business Media LLC, 1994.
Abstract: This work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

Subjects :: Materials science
Microcrystalline
Chemical engineering
Microcrystalline silicon
Doping
Wide-bandgap semiconductor
Silicon oxycarbide
Partial pressure

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