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Formation and characterization of locally strained Ge1−Sn /Ge microstructures
- Source :
- Thin Solid Films. 557:164-168
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- In this study, we have examined the formation of uniaxially strained Ge microstructures with embedded Ge 1 − x Sn x epitaxial layers and the microscopic local strain structure in Ge and Ge 1 − x Sn x using synchrotron X-ray microdiffraction and the finite element method. We achieved local heteroepitaxial growth of Ge 0.947 Sn 0.053 layers on the Ge recess regions. Microdiffraction measurements reveal that an average uniaxial compressive strain of 0.19% is induced in Ge locally with Ge 1 − x Sn x stressors. In addition, we found that the Sn precipitation near the Ge 1 − x Sn x /Ge(001) interface occurs after post-deposition annealing at 500 °C without the introduction of dislocation. It is considered that the local Sn precipitation occurs preferentially due to the larger residual stresses near the Ge 1 − x Sn x /Ge interface.
- Subjects :
- Materials science
Annealing (metallurgy)
Metals and Alloys
chemistry.chemical_element
Germanium
Surfaces and Interfaces
Epitaxy
Microstructure
Synchrotron
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Crystallography
chemistry
Residual stress
law
Materials Chemistry
Tin
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 557
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........cd71707af9fe2d176cc6dc3912e0d109