Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices

Discrepancies in reported electronic stopping cross sections and simulated concentration-depth profiles in 4H-SiC for low-velocity ions have made it difficult to select ion species suited for channeled implantation to be used in multi-epitaxial growth for superjunction devices. In this study, a parallel-scanning system was used to vertically implant 9 × 107-cm s−1 ions into a nominal (0001) wafer at RT. Among the possible channeled implantations of nitrogen or phosphorus ions into p-type 4H-SiC and boron or aluminum ions into n-type 4H-SiC, aluminum-ion implantation into n-type 4H-SiC was concluded to be the best for minimizing repetition of the epitaxial growth/ion implantation steps.