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Simulations of Junction Termination Extensions in Vertical GaN Power Diodes
- Source :
- IEEE Transactions on Electron Devices. 64:2291-2297
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2017.
-
Abstract
- Simulations of reverse breakdown behavior of GaN power diodes with junction termination extensions (JTEs) are presented. The p-type JTE is located at the edge of the main p-n-junction, and under reverse bias, the charge in the JTE causes spreading and reduction of the peak electric fields to avoid premature avalanche breakdown. To determine the available charge in the JTE, it is shown that the electric field under reverse bias causes severe band bending within the JTE and full ionization of the Mg acceptor. Therefore, all the Mg dopants contribute charge and determine the performance of the JTE. The dependence of the breakdown voltage on the JTE’s acceptor concentration and thickness is shown. When the JTE is properly designed, the simulations show improved reverse breakdown behavior and breakdown efficiencies approaching 98% of the ideal limit for planar geometry. Finally, the challenges of creating JTEs within GaN power diodes are discussed.
- Subjects :
- 010302 applied physics
Avalanche diode
Materials science
business.industry
Gallium nitride
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Avalanche breakdown
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Band bending
chemistry
Electric field
0103 physical sciences
Breakdown voltage
Optoelectronics
Zener diode
Electrical and Electronic Engineering
0210 nano-technology
business
Diode
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 64
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........cd1df1c5839e64ab4fcb31c309f2406b