Ultrathin layers and short-period superlattices in semiconductor structures

During the last decade the application of quantum-size-effect-heterostructures to solid state micro- and optoelectronics has attracted great attention, because it has made possible to improve drastically the parameters of most known devices and to invent new ones. Results are given of the investigation of the photoluminescence (PL), electroluminescence (EL), and galvanomagnetic properties of MBE-grown AIIIBV heterostructures with different sequences of ultrathin layers and short-period superlattices. The influence of introduction of such sequences on device structure characteristics is discussed. [Russian Text Ignored.]