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Self-formation of SiGe oxide, Ge, and void multilayers via thermal oxidation of hydrogenated epitaxial SiGe films
- Source :
- Vacuum. 213:112072
- Publication Year :
- 2023
- Publisher :
- Elsevier BV, 2023.
- Subjects :
- Condensed Matter Physics
Instrumentation
Surfaces, Coatings and Films
Subjects
Details
- ISSN :
- 0042207X
- Volume :
- 213
- Database :
- OpenAIRE
- Journal :
- Vacuum
- Accession number :
- edsair.doi...........ccb1333be02696b36bded2dad2a1c1d0