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A current mirror method for thermal instability of SOI BJT
- Source :
- IEEE International Integrated Reliability Workshop Final Report, 2003.
- Publication Year :
- 2004
- Publisher :
- IEEE, 2004.
-
Abstract
- A current mirror method is propose in this paper to evaluate thermal issues in silicon-on -insulator (SOI) bipolar junction transistors (BJTs) accompanied by conventional transistor level methods. It can provide quantitative analysis for thermal instability in the whole range of power, even in the safe operating area (SOA) derived from conventional transistor methods. The change of SOA is also investigated by current mirror with an emitter degeneration resistor and various thermal resistances using a VBIC model.
Details
- Database :
- OpenAIRE
- Journal :
- IEEE International Integrated Reliability Workshop Final Report, 2003
- Accession number :
- edsair.doi...........cc22214d6b4494d83cde6816552acbed