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Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface
- Source :
- Materials Science Forum. :395-398
- Publication Year :
- 1998
- Publisher :
- Trans Tech Publications, Ltd., 1998.
Details
- ISSN :
- 16629752
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........cc19a7787088256251c1c1030e52a4dc
- Full Text :
- https://doi.org/10.4028/www.scientific.net/msf.264-268.395