Preparation of silicon carbide by electrospraying of a polymeric precursor

Silicon carbide (SiC) coatings and films have been prepared for the first time by electrostatic atomization of a solution of a polymeric precursor and deposition on to alumina and zirconia substrates. The deposits were heated to 1300 degreesC prior to their examination by X-ray energy-dispersive spectra and selected-area diffraction in scanning and transmission electron microscopes. The results show that these coatings and films are crystalline and probably consist of co-existing alpha -SiC and beta -SiC phases.