Interfacial electronic states and self-formed p–n junctions in hydrogenated MoS2/SiC heterostructure

MLA

Paul K. Chu, et al. “Interfacial Electronic States and Self-Formed P–n Junctions in Hydrogenated MoS2/SiC Heterostructure.” Journal of Materials Chemistry C, vol. 6, Jan. 2018, pp. 4523–30. EBSCOhost, https://doi.org/10.1039/c8tc00742j.

APA

Paul K. Chu, Kewei Xu, Yuhong Huang, Tai Min, Fei Ma, Qinglong Fang, & Xumei Zhao. (2018). Interfacial electronic states and self-formed p–n junctions in hydrogenated MoS2/SiC heterostructure. Journal of Materials Chemistry C, 6, 4523–4530. https://doi.org/10.1039/c8tc00742j

Chicago

Paul K. Chu, Kewei Xu, Yuhong Huang, Tai Min, Fei Ma, Qinglong Fang, and Xumei Zhao. 2018. “Interfacial Electronic States and Self-Formed P–n Junctions in Hydrogenated MoS2/SiC Heterostructure.” Journal of Materials Chemistry C 6 (January): 4523–30. doi:10.1039/c8tc00742j.