Anomalous hall effect in the In1 − x Mn x Sb dilute magnetic semiconductor with MnSb inclusions

We study InSb:Mn polycrystals with different values of the Mn content. In these samples, two ferromagnetic phases have been found: MnSb nanoinclusions with TC ≈ 600 K and an InMnSb magnetic host with TC below 10 K. The magnetic field dependence obtained for the measured Hall resistance exhibits a nonlinear behavior within a wide temperature range. At high temperatures, such a behavior can be attributed to the existence of two types of charge carriers, namely, light and heavy holes. At temperatures below the Curie point of the InMnSb host, the anomalous Hall effect contributing to the nonlinearity of the Hall resistance has been observed. Ferromagnetic MnSb inclusions do not contribute to the anomalous Hall effect. They do not lead to any spin polarization of charge carriers owing to the Schottky barrier, which surrounds these inclusions and prevents their interaction with charge carriers. A method has been proposed for distinguishing the anomalous Hall component in the case where the Hall resistance includes a nonlinear contribution of a different nature.