AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

AlGaN is an important material for ultra-violet light emitters, photo detectors and high breakdown voltage switching devices. In this work, crack-free AlxGa1-xN (5% 70%) template. The structural quality of AlGaN layers is comparable to that of GaN layers grown on silicon(111). For Al0.16Ga0.84N, the FWHM of HR-XRD (0002) and (-1102) ω-scan is around 650 arc sec and 1200 arc sec respectively. Based on this high quality AlGaN buffer, a double heterostructure (DH) FET was demonstrated. The sheet resistance of DH-FET is 274 ± 4.7 Ω/□ and the uniformity value of 1.7% is also excellent. Some of the wafers have been processed. Devices with a gate length of 2 μm showed current density of 500 mA/mm and transconductance of more than 200 mS/mm. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)