Computer Simulation and Controlled Growth of Large Diameter Czochralski Silicon Crystals

Computer simulation leading to controlled large diameter Czochralski crystal growth is discussed. A simple mathematical model, which describes the different crystal growth phases including neck‐in, fast flat top, roll‐over to constant diameter bulk growth, and tail‐off is presented. This model, in conjunction with a computer‐implemented simulator, is used to simulate silicon crystal growth. Good agreement between simulation results and experimental crystal growth is obtained.