Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)

This paper demonstrates a modulation-doped fisseld-effect transistor (MODFET) and a metal-semiconductor field-effect transistor (MESFET) using β-(AlGa)2O3 (010). Ohmic contacts on Sn-doped (Al0.15Ga0.85)2O3 exhibit a fairly linear behavior, which has a specific contact resistivity and sheet resistance of 9 × 10−5 Ω cm2 and 75 kΩ/, respectively. The MODFET with Sn-doped (Al0.08Ga0.92)2O3 barrier layer showed a breakdown voltage of 610 V for gate-drain spacing (L gd) of 8 μm, while the (Al0.16Ga0.85)2O3-channel MESFET exhibited a breakdown voltage of 940 V for L gd of 20 μm. These results show the great potential of (AlGa)2O3 transistors for high-power applications.