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Superior Performance and Reliability of Double Gate Gaussian Doped Negative Capacitance Junctionless Transistor for 200–500 K
- Source :
- IETE Technical Review. 37:391-401
- Publication Year :
- 2019
- Publisher :
- Informa UK Limited, 2019.
-
Abstract
- In this work, performance of Double Gate Gaussian Doped Negative Capacitance Junctionless Transistor (DGGDNCJLT) has been studied for temperature range 200–500 K to explore the suitability of the d...
- Subjects :
- Work (thermodynamics)
Materials science
business.industry
Gaussian
020208 electrical & electronic engineering
Transistor
Doping
020206 networking & telecommunications
02 engineering and technology
Atmospheric temperature range
Ferroelectricity
law.invention
symbols.namesake
Reliability (semiconductor)
law
0202 electrical engineering, electronic engineering, information engineering
symbols
Optoelectronics
Electrical and Electronic Engineering
business
Negative impedance converter
Subjects
Details
- ISSN :
- 09745971 and 02564602
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- IETE Technical Review
- Accession number :
- edsair.doi...........cadd8b7b6abc6e5654aab5c5a44ceac8
- Full Text :
- https://doi.org/10.1080/02564602.2019.1642149