Back to Search
Start Over
Theoretical design of single-molecule NOR and XNOR logic gates by using transition metal dibenzotetraaza[14]annulenes*
- Source :
- Chinese Physics B. 29:067202
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- The idea of replacing traditional silicon-based electronic components with the ones assembled by organic molecules to further scale down the electric circuits has been attracting extensive research focuses. Among the molecularly assembled components, the design of molecular logic gates with simple structure and high Boolean computing speed remains a great challenge. Here, by using the state-of-the-art nonequilibrium Green’s function theory in conjugation with first-principles method, the spin transport properties of single-molecule junctions comprised of two serially connected transition metal dibenzotetraaza[14]annulenes (TM(DBTAA), TM = Fe, Co) sandwiched between two single-walled carbon nanotube electrodes are theoretically investigated. The numerical results show a close dependence of the spin-resolved current-voltage characteristics on spin configurations between the left and right molecular kernels and the kind of TM atom in TM(DBTAA) molecule. By taking advantage of spin degree of freedom of electrons, NOR or XNOR Boolean logic gates can be realized in Fe(DBTAA) and Co(DBTAA) junctions depending on the definitions of input and output signals. This work proposes a new kind of molecular logic gates and hence is helpful for further miniaturization of the electric circuits.
- Subjects :
- Physics
business.industry
Molecular logic gate
General Physics and Astronomy
02 engineering and technology
Annulene
021001 nanoscience & nanotechnology
01 natural sciences
XNOR gate
Logic gate
visual_art
0103 physical sciences
Electronic component
Atom
visual_art.visual_art_medium
Optoelectronics
010306 general physics
0210 nano-technology
business
Electronic circuit
Spin-½
Subjects
Details
- ISSN :
- 16741056
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........caa8a087c425033910dd79d0aea27049