Dynamic image forces near a semiconductor-vacuum interface: The role of quantum-mechanical corrections

The energy of dynamic image forces acting on a charged particle moving normally to the semiconductor-vacuum interface or in a vacuum gap between two semiconductors is calculated in the framework of the perturbation theory. The dielectric approach allows for spatial and time dispersions of the dielectric functions of electrodes. It is shown that the quantum-mechanical character of the screening should be taken into account. In particular, the dynamic corrections to the static image forces appear to be less than those in the quasi-classical model. The perturbation method used in this work is applicable in wider ranges of external electrostatic fields and particle energies.