Partial intensity approach for quantitative analysis of reflection-electron-energy-loss spectra

We have considered a formalism, known as partial intensity approach (PIA), previously developed to quantitatively analyze reflection electron energy loss (REEL) spectra [1,2]. The aim of the approach is, in particular, to recover the single scattering distribution of energy losses and to separate it into bulk and surface contributions, respectively referred to as the differential inverse inelastic mean free path (DIIMFP) and the differential surface excitation parameter (DSEP). As compared to [1] and [2], we have implemented a modified approach, and we have applied it to the specific geometry of the cylindrical mirror analyzer (CMA), used to acquire the REEL spectra shown here. Silicon, a material with well-defined surface and bulk plasmons, is taken as a case study to investigate the approach as a function of electron energy over the energy range typical of REELS, i.e. from 250 eV to 2 keV. Our goal is, on the one hand, to examine possible limits for the applicability of the approach and, on the other hand, to test a basic assumption of the PIA, namely that a unique DIIMFP and a unique DSEP account for REEL spectra, whatever the acquisition conditions (i.e. electron energy or angle of surface crossing) are. We find that a minimum energy exists below which the PIA cannot be applied and that the assumption of REEL spectra accounted for by unique DIIMFP and DSEP is indeed an approximation.