The growth and characterization of low resistivity n-type ZnSy Sel-y on (100) GaAs

ZnSy Sel°y epitaxial layers have been deposited on GaAs substrates by hydrogen transport from elemental sources and employing hydrides as the source of Group VI elements. The dependence of the sulphur mole-fraction, y, on substrate temperature and reactant partial pressures was investigated. Under Zn-rich conditions y increased almost linearly with the H2S overpressure. Hall effect measurements indicated that the films were n-type with resistivity of 0.01 − 0.1Ω cm and high resolution electron microscopy indicated a sharp interface with low defect concentrations both at the interface and within the lattice-matched epitaxial layers.