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GaAs FET large-signal model for high power amplifier
- Source :
- 1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473).
- Publication Year :
- 2003
- Publisher :
- IEEE, 2003.
-
Abstract
- A new large signal model of GaAs MESFET is proposed. A commercial packaged high power MESFET (Fujitsu FLC103WG) is adopted for the extraction. Both the hot and cold condition measurements and the pulsed I/V measurement are performed to derive the model. A simple single-stage class-AB amplifier is subsequently built so as to verify the derived model. The simulation and measurement results of the intermodulation distortion of this amplifier are compared.
Details
- Database :
- OpenAIRE
- Journal :
- 1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473)
- Accession number :
- edsair.doi...........ca2eb3fe26deb58fb01e8235a2feb86b
- Full Text :
- https://doi.org/10.1109/apmc.1999.833673