Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

The first observation of low-temperature magnetoresistance (MR) of interference nature in the case of a light doping is reported. The MR occurs in n- and p-type Ge samples at a frequency of 10 GHz at temperatures below 30 K in weak magnetic fields on the background of the classical MR effect associated with electrons in different valleys (n-Ge) and with heavy and light holes (p-Ge).