Effect of H2O2 Surface Passivation on the Electrical Properties of GaN Film

MLA

Moon-Deock Kim, et al. “Effect of H2O2 Surface Passivation on the Electrical Properties of GaN Film.” Nanoscience and Nanotechnology Letters, vol. 8, Oct. 2016, pp. 864–68. EBSCOhost, https://doi.org/10.1166/nnl.2016.2200.

APA

Moon-Deock Kim, Byung-Guon Park, Song-Gang Kim, Eui-Young Oh, R. Saravana Kumar, Maddaka Reddeppa, & Sang-Tae Lee. (2016). Effect of H2O2 Surface Passivation on the Electrical Properties of GaN Film. Nanoscience and Nanotechnology Letters, 8, 864–868. https://doi.org/10.1166/nnl.2016.2200

Chicago

Moon-Deock Kim, Byung-Guon Park, Song-Gang Kim, Eui-Young Oh, R. Saravana Kumar, Maddaka Reddeppa, and Sang-Tae Lee. 2016. “Effect of H2O2 Surface Passivation on the Electrical Properties of GaN Film.” Nanoscience and Nanotechnology Letters 8 (October): 864–68. doi:10.1166/nnl.2016.2200.