Back to Search Start Over

Reliability analyses on a TSV structure for CMOS image sensor

Authors :
Chung-Yen Ni
Ben-Je Lwo
Source :
2012 IEEE 62nd Electronic Components and Technology Conference.
Publication Year :
2012
Publisher :
IEEE, 2012.

Abstract

In order to assess the reliability behavior of a typical TSV structure, this study describes the reliability tests to qualify the samples with three types of the TSV test-keys, which includes the Kelvin structure, the via-chain, and the meander metal lines. With enough number of the samples for statistic analyses, resistances of the samples were first found increased after the preconditioning process. The temperature cycling tests (TCT) and the temperature humidity cycling tests (THTC) were next performed according to the JEDEC standards, and resistances variations on the samples were recorded during the tests. The Weibull parameters for the testing samples were finally extracted from the testing data to obtain the lifetime performance of the samples.

Details

Database :
OpenAIRE
Journal :
2012 IEEE 62nd Electronic Components and Technology Conference
Accession number :
edsair.doi...........c9a86d6a50df6fab8bf9fa8542ea7e22
Full Text :
https://doi.org/10.1109/ectc.2012.6248809