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Effects of focused ion beam irradiation on MOS transistors

Authors :
Daniel M. Fleetwood
Ann N. Campbell
Jerry M. Soden
Kenneth A. Peterson
Source :
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.
Publication Year :
2002
Publisher :
IEEE, 2002.

Abstract

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 /spl mu/m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga/sup +/ focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.

Details

Database :
OpenAIRE
Journal :
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual
Accession number :
edsair.doi...........c991a304e3b8a3e7ada826622cb1dc94
Full Text :
https://doi.org/10.1109/relphy.1997.584241