Cite
Benchmarking β‐Ga 2 O 3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy
MLA
Yuan Qin, et al. “Benchmarking Β‐Ga 2 O 3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy.” Advanced Electronic Materials, vol. 6, Jan. 2020, p. 1901151. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........c978d0df87252cfa2c9d755616cb11d2&authtype=sso&custid=ns315887.
APA
Yuan Qin, Shibing Long, Wenxiang Mu, Guangwei Xu, Renato Buzio, Zhitai Jia, Qiming He, Xutang Tao, & Andrea Gerbi. (2020). Benchmarking β‐Ga 2 O 3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy. Advanced Electronic Materials, 6, 1901151.
Chicago
Yuan Qin, Shibing Long, Wenxiang Mu, Guangwei Xu, Renato Buzio, Zhitai Jia, Qiming He, Xutang Tao, and Andrea Gerbi. 2020. “Benchmarking Β‐Ga 2 O 3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy.” Advanced Electronic Materials 6 (January): 1901151. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........c978d0df87252cfa2c9d755616cb11d2&authtype=sso&custid=ns315887.