Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometricBi2Te2S

We acknowledge partial support from the Saint Petersburg State University (Grant No. 15.61.202.2015), Tomsk State University competitiveness improvement program (Project No. 8.1.01.2017), and the Spanish Ministry of Science and Innovation (Grant No. FIS2016-75862-P). This study was partially supported by the Russian Science Foundation (Projects No. 17-12-01047, for the electrophysical properties, and No. 18-12-00169, for the theoretical calculations) and by the Russian Foundation for Basic Research (Project No. 17-08-00955, for the crystal growth and structural characterization). S.V.E. acknowledges support by the Fundamental Research Program of the State Academies of Sciences for 2013–2020. I.P.R. acknowledges support by the Ministry of Education and Science of the Russian Federation within the framework of the governmental program Megagrants (state task No. 3.8895.2017/P220). A.K. was financially supported by KAKENHI Grants No. 26247064 and No. 17H06138.