Hydrodynamical Model for GaAs Semiconductors Based on the Maximum Entropy Principle with Application to Electronic Devices

Authors :: Giovanni Mascali
Angelo Marcello Anile
Vittorio Romano
Source :: Modeling, Simulation, and Optimization of Integrated Circuits ISBN: 9783034894265
Publication Year :: 2003
Publisher :: Birkhäuser Basel, 2003.
Abstract: A hydrodynamical model for electron transport in GaAs semiconductors, which is free of any fitting parameter, has been formulated in [1] on the basis of the maximum entropy principle, by including both г and L conduction band valleys described by the Kane dispersion relation.

Subjects :: Physics
Basis (linear algebra)
Condensed matter physics
business.industry
Principle of maximum entropy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Semiconductor
visual_art
Dispersion relation
Electronic component
visual_art.visual_art_medium
Electronic band structure
business
Gunn diode
Diode

ISBN :: 978-3-0348-9426-5
ISBNs :: 9783034894265
Database :: OpenAIRE
Journal :: Modeling, Simulation, and Optimization of Integrated Circuits ISBN: 9783034894265
Accession number :: edsair.doi...........c93e1e9574a1e03fd4acfb5e60d4452f
Full Text :: https://doi.org/10.1007/978-3-0348-8065-7_1

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