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400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen
- Source :
- IEEE Transactions on Electron Devices. 69:3732-3736
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........c8d4d32676108ce53480f6565bef2e54
- Full Text :
- https://doi.org/10.1109/ted.2022.3178056