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In0.53Ga0.47As contact layer for 1.3 μm light-emitting diodes
- Source :
- Electronics Letters. 17:703
- Publication Year :
- 1981
- Publisher :
- Institution of Engineering and Technology (IET), 1981.
-
Abstract
- Measurements of the specific contact resistance on epitaxially grown layers of p-In1−xGaxAsyP1−y as a function of composition demonstrate the resistance minimum of 7×10−6 Ωcm2 for In0.53Ga0.47As. Growth procedures for the preparation of InGaAsP/InP double-heterostructure LED wafers incorporating such a ternary InGaAs contact layer are described. This contacting technique allows fabrication of high-performance devices with reproducibly low series resistance.
Details
- ISSN :
- 00135194
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- Electronics Letters
- Accession number :
- edsair.doi...........c8a268a85a8c783ccd1cac97c18fcd0c
- Full Text :
- https://doi.org/10.1049/el:19810493