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Si paste technology for high-efficiency solar cells
- Source :
- Solar Energy. 135:70-76
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- This study demonstrates the successful implementation of industrially feasible local B doping as a local back surface field via the Si paste technology to fabricate high-efficiency solar cells. Si paste formed by 25 wt% p-type Si nanoparticles and 75 wt% organic solvent is used as the B source. Si paste is fully screen-printed on the preprocessed p-type Si rear surface, and then a homogenous Si cladding layer is formed by picosecond laser cladding. During this process, B diffuses into the Si substrate. The Si cladding layer itself is a heavily doped layer and forms a metallurgical bond between Si substrate. After co-firing with Al paste, cells obviously avoid Kirkendall void formation at contact regions. The heavily doped Si cladding layer and localized B doping can decrease the contact resistance and reduce the minority carrier recombination at the local metal contacts. This optimized rear surface design finally contributes to push the overall average cell efficiency over 20.3% on p-type CZ wafers.
- Subjects :
- 010302 applied physics
Void (astronomy)
Materials science
Kirkendall effect
Renewable Energy, Sustainability and the Environment
business.industry
Contact resistance
Doping
Nanoparticle
02 engineering and technology
021001 nanoscience & nanotechnology
Cladding (fiber optics)
01 natural sciences
Metal
visual_art
0103 physical sciences
visual_art.visual_art_medium
Optoelectronics
General Materials Science
Wafer
0210 nano-technology
business
Subjects
Details
- ISSN :
- 0038092X
- Volume :
- 135
- Database :
- OpenAIRE
- Journal :
- Solar Energy
- Accession number :
- edsair.doi...........c86ceacabecfcde1a97dac0911c57b6f