MODELLING OF NEXT ZEN MEMORY CELL USING LOW POWER CONSUMING HIGH SPEED NANO DEVICES

Hybrid SET-CMOS circuits which syndicate the assets of both the SET [Single Electron Transistor] and CMOS depicts highest possibilities to be incorporated in practical implementation for future low power VLSI/ULSI configurations. The proposed work is an attempt based on SET-CMOS hybrid circuit to realize the next gen simple Memory Cell. The authors adhered to MIB model for SET and BSIM4 model for CMOS in realizing the complex cell. The maneuver of the proposed circuit is verified subsequently in standard environment. The outcomes are in good trade off with the conventional statistics of existing memory cell.