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Lattice strain fromDXcenters and persistent photocarriers in Sn-doped and Si-dopedGa1−xAlxAs
- Source :
- Physical Review B. 46:10078-10085
- Publication Year :
- 1992
- Publisher :
- American Physical Society (APS), 1992.
-
Abstract
- The lattice strain caused by electron emission from DX centers was determined by x-ray diffraction for Sn-doped and Si-doped Ga 1-x Al x As, with x Al =0.22-0.24. Measurements were made after cooling samples to 14 K in the dark, which filled DX centers and thereby produced low conductivity. The measurements were repeated after emptying the DX centers by ir illumination, giving ΔN e =(1.0-1.6)×10 18 cm -3 conduction electrons which persisted after illumination
Details
- ISSN :
- 10953795 and 01631829
- Volume :
- 46
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........c823ddfae31670af166cd0d591e0b318