AlGaN/GaN HBTs using regrown emitter

AlGaN/GaN HBTs using regrown emitter AlGaN/GaN HBTs have been realised using the regrown emitter method. The device structure consists of an n-GaN collector, p-GaN base, and selectively grown AlGaN emitter. The HBTs were grown using metal organic chemical vapour deposition on sapphire substrate. The emitter was grown selectively on a pn junction diode after it was patterned with SiN. A common emitter curve showing low-leakage has been obtained.