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The effect of interfacial layer properties on the performance of Hf-based gate stack devices

Authors :
Byoung Hun Lee
Patrick S. Lysaght
Patrick M. Lenahan
Jason T. Ryan
S. J. Pennycook
Gennadi Bersuker
Joel Barnett
Rino Choi
Paul Kirsch
K. van Benthem
Chadwin D. Young
Brendan Foran
Chanro Park
Source :
Journal of Applied Physics. 100:094108
Publication Year :
2006
Publisher :
AIP Publishing, 2006.

Abstract

The influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high-k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high-k-induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

Details

ISSN :
10897550 and 00218979
Volume :
100
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........c7275c5339fb76f6e108ddd3f5d8dedd
Full Text :
https://doi.org/10.1063/1.2362905