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Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

Authors :
W. Schrenk
Marcin Siekacz
Christian Pflügl
Czeslaw Skierbiszewski
Izabella Grzegory
Gottfried Strasser
S. Porowski
S. Golka
Source :
Applied Physics Letters. 88:172106
Publication Year :
2006
Publisher :
AIP Publishing, 2006.

Abstract

Double-barrier GaN resonant tunneling diodes with AlGaN barriers were fabricated on bulk (0001) single-crystal GaN substrates. Layers were grown using molecular-beam epitaxy with a rf plasma nitrogen source. Single diodes of 6μm diameter were prepared by inductively coupled plasma reactive ion etching. For many diodes clear negative differential resistance is observed around 2V with peak currents around 10kA∕cm2 and a peak-to-valley ratio of about 2 at room temperature. Its observation does not depend on specific conditions of measurement; however, it slowly decays after each measurement. The mechanism behind this decay is investigated since it is obviously prohibiting the usage of GaN resonant tunneling diodes so far. It is shown not to be caused by catastrophic breakdown of the devices.

Details

ISSN :
10773118 and 00036951
Volume :
88
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........c71b5349c232b4a1ddca4411aa6bd485