Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide

We have investigated the current-voltage ( I-V ) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4 H -SiC in the 300–800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height ( Ф Bo ) and ideality factor ( n ) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications.