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Evidences for ambient oxidation of indium nitride quantum dots
- Source :
- physica status solidi (b). 248:2853-2856
- Publication Year :
- 2011
- Publisher :
- Wiley, 2011.
-
Abstract
- Investigations were carried out on the ambient condition oxidation of self-assembled, fairly uniform indium nitride (InN) quantum dots (QDs) fabricated on p-Si substrates. Incorporation of oxygen in to the outer shell of the QDs was confirmed by the results of transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS). As a consequence, a weak emission at high energy (similar to 1.03?eV) along with a free excitonic emission (0.8?eV) was observed in the photoluminescence spectrum. The present results confirm the incorporation of oxygen into the lattice of the outer shell of InN QDs, affecting their emission properties. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Subjects :
- Photoluminescence
Indium nitride
Photoemission spectroscopy
Analytical chemistry
chemistry.chemical_element
Nanotechnology
Condensed Matter Physics
Oxygen
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
X-ray photoelectron spectroscopy
Transmission electron microscopy
Quantum dot
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 03701972
- Volume :
- 248
- Database :
- OpenAIRE
- Journal :
- physica status solidi (b)
- Accession number :
- edsair.doi...........c6c581f324bb92285acd8b062df58553