Back to Search Start Over

Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic

Authors :
Kenneth A. Goldberg
Rene Delano
James Alexander Liddle
Layton C. Hale
Patrick P. Naulleau
Bob Gunion
Senajith Rekawa
Gideon Jones
Hanjing Huang
Erik H. Anderson
Bruce Harteneck
Ron Oort
Brian Hoef
Al Rawlins
Keith Jackson
D. W. Phillion
Gary E. Sommargren
C. Chung
Ron Tackaberry
John S. Taylor
Farhad Salmassi
Paul Denham
Drew Kemp
Kevin Bradley
Source :
SPIE Proceedings.
Publication Year :
2004
Publisher :
SPIE, 2004.

Abstract

The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient, and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time. As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS, a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (s) of 1 and support the full 200′600 design printed field of view. In addition to a new illuminator design, new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.

Details

ISSN :
0277786X
Database :
OpenAIRE
Journal :
SPIE Proceedings
Accession number :
edsair.doi...........c673fd3d13f2fd93c4b6f00d1f2c95f1
Full Text :
https://doi.org/10.1117/12.556538