Cite
Interface passivation of Silicon Dioxide layers on Silicon Carbide
MLA
Leonard C. Feldman, et al. “Interface Passivation of Silicon Dioxide Layers on Silicon Carbide.” 2005 International Semiconductor Device Research Symposium, Mar. 2006. EBSCOhost, https://doi.org/10.1109/isdrs.2005.1596071.
APA
Leonard C. Feldman, John R. Williams, Sarit Dhar, Tamara Isaacs-Smith, Sokrates T. Pantelides, & Shiqiang Wang. (2006). Interface passivation of Silicon Dioxide layers on Silicon Carbide. 2005 International Semiconductor Device Research Symposium. https://doi.org/10.1109/isdrs.2005.1596071
Chicago
Leonard C. Feldman, John R. Williams, Sarit Dhar, Tamara Isaacs-Smith, Sokrates T. Pantelides, and Shiqiang Wang. 2006. “Interface Passivation of Silicon Dioxide Layers on Silicon Carbide.” 2005 International Semiconductor Device Research Symposium, March. doi:10.1109/isdrs.2005.1596071.