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The suppressed negative bias illumination-induced instability in In-Ga-Zn–O thin film transistors with fringe field structure

Authors :
Yu Chun Chen
Ting-Chang Chang
Jung Fang Chang
Wang Cheng Chung
Ya-Hsiang Tai
Cheng Hsu Chou
Chang Pei Wu
Tien-Yu Hsieh
Hung Wei Li
Te Chih Chen
Source :
Applied Physics Letters. 101:223502
Publication Year :
2012
Publisher :
AIP Publishing, 2012.

Abstract

This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are showed when device has larger FF structures. This finding is attributed to more dispersive distribution of photo-generated holes in the width direction of a-IGZO during NBIS, which reduce the hole trapping phenomenon in the front channel interface. The a-IGZO TFT with FF structure is expected to be an effective method to increase the electrical reliability of devices after NBIS.

Details

ISSN :
10773118 and 00036951
Volume :
101
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........c659bb0f6d06ccbbdd32c000d612fc91
Full Text :
https://doi.org/10.1063/1.4767996