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Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound
- Source :
- Journal of Electronic Materials. 47:4370-4378
- Publication Year :
- 2018
- Publisher :
- Springer Science and Business Media LLC, 2018.
-
Abstract
- We studied the temperature dependence (77–300 K) of the electron concentration and mobility using the Hall method under ultrasound (the acoustic Hall method) to determine the mechanisms by which ultrasound influences the electrical activity of near-dislocation clusters in n-type low-ohmic Cd1−xZnxTe single crystals (NCl ≈ 1024 m−3; x = 0; 0.04) with different dislocation density (0.4–5.1) × 1010 m−2. Changes in electrophysical parameters were found to occur as a function of temperature and ultrasound intensity. To evaluate the relative contribution of different charge carrier scattering mechanisms (lattice scattering, ionized impurity scattering, neutral impurity scattering, and dislocation scattering) and their change under ultrasound, a differential evolution method was used. This method made it possible to analyze experimental mobility μH(T) by its nonlinear approximation with characteristic temperature dependence for each mechanism. An increase in neutral impurity scattering and a decrease in ionized impurity and dislocation scattering components were observed under ultrasound. The character and the amount of these acoustically induced changes correlate with particular sample dislocation characteristics. It was concluded that the observed effects are related to the acoustically induced transformation of the point-defect structure, mainly in the near dislocation crystal regions.
- Subjects :
- 010302 applied physics
Materials science
Condensed matter physics
Scattering
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Crystallographic defect
Electronic, Optical and Magnetic Materials
Ionized impurity scattering
Crystal
Hall effect
Impurity
0103 physical sciences
Materials Chemistry
Charge carrier
Electrical and Electronic Engineering
Dislocation
0210 nano-technology
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........c6469253a7ab360ccefa053b46c19924