Back to Search
Start Over
Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink
- Source :
- Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2015
- Publisher :
- The Japan Society of Applied Physics, 2015.
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........c5ee7baf92b77639227af7672eda9b61
- Full Text :
- https://doi.org/10.7567/ssdm.2015.ps-6-1