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High hole current density in diamond MOSFETs fabricated on H-terminated Iia-type (111) diamond substrate
- Source :
- Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2009
- Publisher :
- The Japan Society of Applied Physics, 2009.
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........c5ee64b6cc008931ad53f67a1df5f000
- Full Text :
- https://doi.org/10.7567/ssdm.2009.k-5-1